- 您现在的位置：买卖IC网 > Sheet目录540 > ZXMN3G32DN8TA (Diodes Inc)MOSFET N-CHAN 30V 8SOIC DUAL
ZXMN3G32DN8
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source Breakdown
V (BR)DSS
30
V
I D = 250 μ A, V GS =0V
Voltage
Zero Gate Voltage Drain
I DSS
0.5
μ A
V DS = 30V, V GS =0V
Current
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-Source Threshold
V GS(th)
1.0
3.0
V
I D = 250 μ A, V DS =V GS
Voltage
Static Drain-Source
On-State Resistance (*)
Forward
R DS(on)
g fs
12
0.028
0.045
?
?
S
V GS = 10V, I D = 6.0A
V GS = 4.5V, I D = 4.9A
V DS = 15V, I D = 6.0A
Transconductance (*)(?)
Dynamic (?)
Input Capacitance
C iss
472
pF
Output Capacitance
Reverse Transfer
C oss
C rss
178
65
pF
pF
V DS = 15V, V GS =0V
f=1MHz
Capacitance
Switching (?)(?)
Turn-On-Delay Time
t d(on)
2.5
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
3.1
14
9.7
10.5
1.86
2.3
ns
ns
ns
nC
nC
nC
V DD = 15V, I D = 1A
R G ? 6.0 ?, V GS =10V
V DS = 15V, V GS = 10V
I D = 6A
Source-drain diode
Diode Forward Voltage (*)
V SD
0.68
1.2
V
T j =25 ° C, I S = 1.7A,
V GS =0V
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
(?) For design aid only, not subject to production testing
(?) Switching characteristics are independent of operating junction temperature.
Issue 1 - January 2008
? Zetex Semiconductors plc 2008
4
www.zetex.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
ZXMN4A06GTA
MOSFET N-CH 40V 5A SOT223
ZXMN4A06KTC
MOSFET N-CHAN 40V 10.9A DPAK
ZXMN6A07FTC
MOSFET N-CHAN 60V SOT23-3
ZXMN6A07ZTA
MOSFET N-CH 60V 1.9A SOT-89
ZXMN6A08E6TC
MOSFET N-CH 60V 2.8A SOT23-6
ZXMN6A08GTA
MOSFET N-CH 60V 3.8A SOT223
ZXMN6A08KTC
MOSFET N-CH 60V 5.36A DPAK
ZXMN6A09DN8TA
MOSFET 2N-CH 60V 5.1A 8-SOIC
相关代理商/技术参数
ZXMN4A06G
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN4A06GTA
功能描述:MOSFET 40V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN4A06GTC
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN4A06K
制造商:Diodes Incorporated 功能描述:MOSFET, N, D-PAK 制造商:DIODES 功能描述:MOSFET, N, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:7.2 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 40V, 10.9A, DPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:10.9A, Drain Source Voltage Vds:40V, On Resistance Rds(on):50mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, No. of Pins:3 , RoHS Compliant: Yes 制造商:Diodes Incorporated 功能描述:MOSFET, N, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:7.2
ZXMN4A06KTC
功能描述:MOSFET 40V 10.9A N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN6A07F
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V SOT23 N-channel enhancement mode mosfet
ZXMN6A07F_07
制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT23 N-channel enhancement mode mosfet
ZXMN6A07FTA
功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube